V15P6-M3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Trench MOS Schottky technology

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V15P6-M3, V15P6HM3
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
16
T_M = 119 °C, R_θJM = 4 °C/W
14
12
10
8
6 T_A = 25 °C, R_θJA = 75 °C/W
4
2
0
0
25
50
75 100 125 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
0.1
0.01
T_A = 25 °C
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
10.0
9.0
D = 0.5
8.0
D = 0.3
7.0
6.0
D = 0.2
5.0 D = 0.1
D = 0.8
D = 1.0
4.0
T
3.0
2.0
1.0
D = t_p/T
t_p
0.0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
T_A = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 09-Jan-17
3
Document Number: 87716
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