V15P45 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

New Product
V15P45
Vishay General Semiconductor
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10
9
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4
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2
1
0
0
D = 0.5 ^{D = 0.8}
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
0.1
0
T_A = 25 °C
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
0.1
0.01
T_A = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 89342 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000