V12W60C-M3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual Trench MOS Barrier Schottky Rectifier

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100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
T_A = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
T_A = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
V12W60C-M3
Vishay General Semiconductor
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
0.1
1
10
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 04-Dec-13
3
Document Number: 89972
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