V12PM12-M3 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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100
T_A = 150°C
10
T_A = 125°C
T_A = 100°C
1
T_A = 25°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
0.001
T_A = 25 °C
0.0001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
V12PM12-M3, V12PM12HM3
Vishay General Semiconductor
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 09-Dec-13
3
Document Number: 89938
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