V12P10_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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V12P10
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 C unless otherwise noted)
14
Resistive or Inductive Load
12
10
8
6
4 ^TL ^measured
at the Cathode Band Terminal
2
0
100
110
120
130
140
150
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.3
D = 0.2
D = 0.5 ^{D = 0.8}
D = 0.1
D = 1.0
T
D = t_p/T
t_p
2
4
6
8
10 12 14
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
T_A = 150 °C
10 _{TA = 125 °C}
1
T_A = 25 °C
0.1
100
Junction to Ambient
10
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Dec-14
3
Document Number: 88981
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