V12P10 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

New Product
V12P10
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
14
Resistive or Inductive Load
12
10
8
6
4 ^TL ^measured
at the Cathode Band Terminal
2
0
100
110
120
130
140
150
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.3
D = 0.2
D = 0.5 ^{D = 0.8}
D = 0.1
D = 1.0
T
D = t_p/T
t_p
2
4
6
8
10 12 14
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
T_A = 150 °C
10 _{TA = 125 °C}
1
T_A = 25 °C
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Junction Capacitance
Document Number: 88981 For technical questions within your region, please contact one of the following:
Revision: 30-Jul-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
3