V10P10 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

New Product
V10P10
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2 T_L measured
at the Cathode Band Terminal
0
0
25 50 75 100 125 150 175
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
100
T_A = 150 °C
10
1
T_A = 125 °C
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
8
D = 0.3 _{D = 0.5} ^{D = 0.8}
7
D = 0.2
6
D = 0.1
5
D = 1.0
4
3
T
2
1
D = t_p/T
t_p
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
T_A = 150 °C
10
T_A = 125 °C
1
0.1
T_A = 25 °C
0.01
0
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
Document Number: 89006 For technical questions within your region, please contact one of the following:
Revision: 30-Jul-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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