V10170C-M3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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100
T_A = 175 °C
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
V10170C-M3
Vishay General Semiconductor
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
0.1
0
T_A = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
T_A = 175 °C
10
Junction to Case
1
T_A = 150 °C
T_A = 125 °C
0.1
1
T_A = 100 °C
0.01
0.001
0.0001
20
T_A = 25 °C
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
PIN
123
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
Revision: 04-Dec-13
3
Document Number: 89940
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