V10150C_11 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V10150C, VI10150C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
1
0.1
0.01
T_A = 150 °C
T_A = 125 °C
T_A = 100 °C
0.001
0.0001
T_A = 25 °C
0.00001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
5
D = 0.8
D = 0.5
4
D = 0.3
D = 0.2
3
D = 0.1
2
D = 1.0
T
1
D = t_p/T
t_p
0
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
T_A = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
Junction to Case
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 89154 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000