US1K-E3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Surface Mount Ultrafast Rectifier

US1A, US1B, US1D, US1G, US1J, US1K, US1M
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Vishay General Semiconductor
100
10
T_J = 150 °C
T_J = 125 °C
1
0.1
0.01
0.3
T_J = 100 °C
T_J = 25 °C
US1A thru US1G
0.5 0.7 0.9 1.1 1.3 1.5 1.7
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
T_J = 150 °C
10
T_J = 125 °C
1
T_J = 100 °C
0.1 US1A thru US1G
T_J = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
100
T_J = 150 °C
10
T_J = 125 °C
1
T_J = 100 °C
0.1
0.01
0.2
T_J = 25 °C
US1J thru US1M
0.7
1.2
1.7
2.2
2.7
3.2
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
1000
100
T_J = 150 °C
T_J = 125 °C
10
1
US1J thru US1M
0.1
T_J = 100 °C
T_J = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 - Typical Reverse Leakage Characteristics
100
US1A thru US1G
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
10
US1J thru US1M
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 7 - Typical Junction Capacitance
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 8 - Typical Transient Thermal Impedance
Revision: 30-Oct-13
3
Document Number: 88768
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