UH8JT_08 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Voltage Ultrafast Rectifier

New Product
UH8JT & UHF8JT
Vishay General Semiconductor
100
T_A = 175 °C
10
T_A = 125 °C
1
T_A = 25 °C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
T_A = 175 °C
10
T_A = 125 °C
1
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
10
UH8JT
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
10
UHF8JT
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 7. Typical Transient Thermal Impedance
Document Number: 88956 For technical questions within your region, please contact one of the following:
Revision: 13-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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