UH4PBC_11 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mount Ultrafast Rectifiers

New Product
UH4PBC, UH4PCC, UH4PCD
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 C unless otherwise noted)
5
Resistive or Inductive Load
4
3
2
1
T_L measured
at the Cathode Band Terminal
0
0
25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
D = 0.5
D = 0.3
D = 0.8
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
0.4
0.4
1.2
1.6
2.0
2.4
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 25 °C
0.1
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
T_A = 150 °C
10
T_A = 125 °C
1
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 88991 For technical questions within your region, please contact one of the following:
Revision: 10-May-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000