UH4PBC Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mount Ultrafast Rectifiers

New Product
UH4PBC, UH4PCC & UH4PDC
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
5
Resistive or Inductive Load
4
3
2
1
T_L measured
at the Cathode Band Terminal
0
0
25 50 75 100 125 150 175
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
100
T_A = 150 °C
10
T_A = 125 °C
1
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
2.0
D = 0.8
D = 0.5
1.6
D = 0.3
D = 0.2
D = 1.0
1.2
D = 0.1
0.8
T
0.4
0
0
D = t_p/T
t_p
0.5
1.0
1.5
2.0
2.5
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 25 °C
0.1
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88991 For technical questions within your region, please contact one of the following:
Revision: 30-Jul-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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