UH1B Datasheet, PDF (3/5 Pages) Vishay Siliconix – Surface Mount Ultrafast Rectifiers

New Product
UH1B, UH1C & UH1D
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
T_L Measured
at the Cathode Band Terminal
0.2
0
95 105 115 125 135 145 155 165 175
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
1000
100
T_A = 175 °C
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
0.1
T_A = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
D = 0.5 ^{D = 0.8}
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
T_A = 125 °C
T_A = 150 °C
1 ^TA ^{= 175 °C}
T_A = 100 °C
0.1
T_A = 25 °C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
Document Number: 89111 For technical questions within your region, please contact one of the following:
Revision: 12-Jun-08
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