UGF8XT Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Voltage Ultrafast Rectifier

www.vishay.com
UG8xT, UGF8xT, UGB8xT
Vishay General Semiconductor
RATINGS AND CHARACTERISTCS CURVES (T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
UG8, UGB8
6
UG8F
4
2
0
25
50
75
100 125 150 175
Case Temperature (°C)
Fig. 1 - Max. Forward Current Derating Curve
10 000
1000
100
T_J = 125 °C
T_J = 100 °C
10
T_J = 25 °C
1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
1000
100
T_J = T_J max.
8.3 ms Single Half Sine-Wave
100
10
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
100
10
1
0.1
0.01
0.5
T_J = 25 °C max.
Pulse Width = 300 µs
1 % Duty Cycle
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
1
0.1
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
350
Q_rr
300 ^Trr
I_F = 8.0 A
V_r = 30 V
250
200
240 A/µs
150
100
50
0
25
50 A/µs
60 A/µs
50 A/µs
60 A/µs
240 A/µs
50
75
100
125
150
Junction Capacitance (°C)
Fig. 6 - Reverse Switching Characteristics
Revision: 21-Aug-13
3
Document Number: 88767
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000