UG8HT Datasheet, PDF (3/5 Pages) General Semiconductor – ULTRAFAST SOFT RECOVERY RECTIFIER

RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
UG8, UGB8
6
UG8F
4
2
0
25
50
75
100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
1000
T_J = T_J max.
8.3 ms Single Half Sine-Wave
UG(F,B)8HT & UG(F,B)8JT
Vishay General Semiconductor
10 000
1000
100
T_J = 125 °C
T_J = 100 °C
10
T_J = 25 °C
1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
100
10
10
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
0.1
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
1
0.1
0.01
0.5
T_J = 25 °C max.
Pulse Width = 300 µs
1 % Duty Cycle
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
350
Q_rr
300 ^Trr
I_F = 8.0 A
V_r = 30 V
250
200
240 A/µs
150
100
50
0
25
50 A/µs
60 A/µs
50 A/µs
60 A/µs
240 A/µs
50
75
100
125
150
Junction Capacitance (°C)
Figure 6. Reverse Switching Characteristics
Document Number: 88767 For technical questions within your region, please contact one of the following:
Revision: 12-Nov-07
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