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U1B_11 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier
New Product
U1B, U1C, U1D
Vishay General Semiconductor
10
TA = 150 °C
1
TA = 125 °C
TA = 100 °C
0.1
TA = 25 °C
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
1000
100
10
1
0.1
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
100
Junction to Ambient
10
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1
0.001
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89400 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000