TSKS5400 Datasheet, PDF (3/5 Pages) Vishay Siliconix – GaAs Infrared Emitting Diode in Side View Package

100
10
1
m ^{tp / T = 0.001}
tp = 100 s
0.1
0.01
10⁰
94 7913 e
10¹
10²
10³
10⁴
I_F – Forward Current ( mA )
Figure 5. Radiant Intensity vs. Forward Current
100.0
10.0
1.0
0.1
1
13718
10
100
1000
I_F – Forward Current ( mA )
Figure 6. Radiant Power vs. Forward Current
1.6
1.4
I_F = 10 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
–45 –30 –15 0 15 30 45 60 75 90
14348
T_amb – Ambient Temperature ( °C )
Figure 7. Relative Radiant Intensity vs.
Ambient Temperature
TSKS5400
Vishay Telefunken
1.25
1.0
0.75
0.5
0.25
0
900
94 7994 e
I_F = 100 mA
950
l – Wavelength ( nm )
1000
Figure 8. Relative Radiant Power vs. Wavelength
0° 10 20
°
°
30°
40°
1.0
0.9
50°
0.8
60°
0.7
70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
14349
Figure 9. Relative Radiant Intensity vs.
Angular Displacement
Document Number 83780
Rev. A7, 15-Dez-99
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