TSHG5510 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

TSHG5510
High Speed Infrared Emitting Diode, _{Vishay Semiconductors}
830 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
1000
t_P/T = 0.01 ^Tamb ^{< 50 °C}
0.02
0.05
0.1
0.2
0.5
100
0.01
0.1
1
10
100
16031
t_P - Pulse Duration (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
100
10
1
t_P = 100 µs
t_P/T = 0.002
0.1
1
21062
10
100
I_F - Forward Current (mA)
1000
Fig. 6 - Radiant Power vs. Forward Current
10
1
0.1
0.01
0.001
0 0.5 1 1.5 2 2.5 3 3.5 4
21009
V_F - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
1.25
1.0
0.75
0.5
0.25
0
740
800
900
16972_1
λ- Wavelength (nm)
Fig. 7 - Relative Radiant Power vs. Wavelength
1000
100
10
1
t_P = 100 µs
t_P/T = 0.002
0.1
1
21010
10
100
I - Forward Current (mA)
F
1000
Fig. 5 - Radiant Intensity vs. Forward Current
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90
21012
Angle (°)
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81887
Rev. 1.1, 25-Jun-09
For technical questions, contact: [e-mail]
www.vishay.com
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