TSHG5410 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero

TSHG5410
High Speed Infrared Emitting Diode, RoHS _{Vishay Semiconductors}
Compliant, 850 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
1000
t_P/T = 0.01 ^Tamb ^{< 50 °C}
0.02
0.05
0.1
0.2
0.5
100
0.01
0.1
1.0
10
100
16031
t_P - Pulse Duration (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
100
10
1
0.1
1
16971
10
100
1000
I_F - Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
1000
100
t_P = 100 µs
t_P/T = 0.001
10
1
0
1
2
3
4
18873
V_F - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
1000
100
10
t_P = 0.1 ms
1
1
21308
10
100
I - Forward Current (mA)
F
1000
Fig. 5 - Radiant Intensity vs. Forward Current
1.25
1.0
0.75
0.5
0.25
0
16972
800
850
900
λ- Wavelength (nm)
Fig. 7 - Relative Radiant Power vs. Wavelength
0° 10° 20°
30°
40°
1.0
50°
0.9
60°
0.8
70°
80°
0.7
21355
0.6 0.4 0.2 0
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81811
Rev. 1.1, 04-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
197