TFBS6711 Datasheet, PDF (3/14 Pages) Vishay Siliconix – Low Profile Fast Infrared Transceiver (FIR, 4 Mbit/s) for IrDA Applications

TFBS6711
Vishay Semiconductors
Absolute Maximum Ratings
Reference point Pin, GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter
Test Conditions
Symbol
Min
Typ.
Supply voltage range,
transceiver
0 V < V_CC2 < 6 V
V_CC1
- 0.5
Supply voltage range,
transmitter
0 V < V_CC1 < 6 V
V_CC2
- 0.5
Input currents
For all Pins, Except IRED Anode
Pin
Output sinking current
Power dissipation
P_D
Junction temperature
T_J
Ambient temperature range
(operating)
T_amb
- 25
Storage temperature range
Soldering temperature
T_stg
- 25
Average output current
Repetitive pulse output current < 90 µs, t_on < 20 %
I_IRED (DC)
I_IRED (RP)
IRED anode voltage
Voltage at all inputs and outputs V_in > V_CC1 is allowed
I_IREDA
V_in
- 0.5
- 0.5
Virtual source size
Method: (1-1/e) encircled
energy
d
1.5
Maximum Intensity for Class 1 operation of
IEC60825-1 or EN60825-1, edition Jan. 2001
IrDA^® specified maximum limit
Due to the internal limitation measures the device is a “class 1” device. It will not exceed the IrDA^®
intensity limit of 500 mW/sr
Max
Unit
6
V
6.5
V
10
mA
25
mA
500
mW
125
°C
+ 85
°C
+ 85
°C
260
°C
125
mA
600
mA
6.5
V
5.5
V
mm
internal
limitation
to class 1
500
mW/sr
Definitions:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhY 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
IrDA®, the Infrared Data Association, implemented MIR and FIR with IrPHY 1.1, followed by IrPhY 1.2, adding the SIR Low Power Stan-
dard. IrPhY 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhY 1.4. A new version of the standard in any
case obsoletes the former version.
www.vishay.com
260
Document Number 84676
Rev. 1.3, 21-Feb-07