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TCLT100 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package
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TCLT100. Series
Vishay Semiconductors
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
VCE = 5 V, IF = 5 mA
TCLT1000
CTR
50
TCLT1002
CTR
63
VCE = 5 V, IF = 10 mA
TCLT1003
TCLT1004
CTR
100
CTR
160
TCLT1002
CTR
22
IC/IF
VCE = 5 V, IF = 1 mA
TCLT1003
CTR
34
TCLT1004
CTR
56
TCLT1005
CTR
50
TCLT1006
CTR
100
VCE = 5 V, IF = 5 mA
TCLT1007
TCLT1008
CTR
80
CTR
130
TCLT1009
CTR
200
TYP.
45
70
100
MAX.
600
125
200
320
150
300
160
260
400
UNIT
%
%
%
%
%
%
%
%
%
%
%
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
2
kV
Partial discharge test voltage -
tTr = 60 s, ttest = 10 s,
VIOTM
8
kV
lot test (sample test)
(see figure 2)
Vpd
1.68
kV
VIO = 500 V
RIO
1012

Insulation resistance
VIO = 500 V, Tamb = 100 °C
RIO
1011

VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109

Forward current
Isi
130
mA
Power dissipation
Pso
265
mW
Rated impulse voltage
VIOTM
8
kV
Safety temperature
Tsi
150
°C
Clearance distance
8.0
mm
Creepage distance
Insulation distance (internal)
8.0
mm
0.40
mm
Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
300
Phototransistor
250
PSO (mW)
200
150
100
50
0
0
94 9182-2
IR-diode
ISI (mA)
25 50 75 100 125 150
TSI - Safety Temperature (°C)
Fig. 1 - Derating Diagram
VIOTM
Vpd
VIOWM
VIORM
t1, t2 = 1 s to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
0
13930
t1
tTr = 60 s
t3 ttest t4
t2 t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
Rev. 2.4, 29-Apr-11
3
Document Number: 83515
For technical questions, contact: optocoupleranswers@vishay.com
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