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SUP90N06-6M0P Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
100
VGS = 10 thru 7 V
100
80
80
60
60
40
40
6V
20
20
0
0
120
96
72
48
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
TC = - 55 °C
25 °C
125 °C
0
0
0.0055
0.0053
0.0051
0.0049
SUP90N06-6m0P
Vishay Siliconix
TC = 125 °C
25 °C
- 55 °C
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Transconductance
VGS = 10 V
24
0.0047
0
0
0.05
0.04
0.03
12
24
36
48
60
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
ID = 20 A
25 °C
0.0045
0
20
40
60
80
100
ID - Drain Current (A)
On-resistance vs. Gate-to-Source Voltage
6000
Ciss
4800
3600
0.02
150 °C
0.01
0.00
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Document Number: 69536
S-72508-Rev. A, 03-Dec-07
2400
1200
Coss
Crss
0
0
12
24
36
48
60
VDS - Drain-to-Source Voltage (V)
Capacitance
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3