SUP40010EL Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
200
160
V_GS = 10 V thru 4 V
150
120
100
80
V_GS = 3 V
50
40
SUP40010EL
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0
0
0.5
1
1.5
2
2.5
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
300
T_C = 25 °C
240
T_C = - 55 °C
180
120
T_C = 125 °C
60
0.003
0.0025
0.002
0.0015
0.001
0.0005
V_GS =4.5 V
V_GS = 10 V
0
0
10
20
30
40
50
I_D - Drain Current (A)
Transconductance
0
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
18 000
13 500
9000
C_oss
C _iss
10
I_D = 20 A
8
6
4
V_DS = 10 V
V_DS = 20 V
V_DS = 32 V
4500
C_rss
0
0
10
20
30
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
2
0
0
40
80
120
160
Q_g - Total Gate Charge (nC)
Gate Charge
S15-2184-Rev. A, 14-Sep-15
3
Document Number: 66964
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000