SUD50N03-06P Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

SUD50N03-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
120
0.0150
T_C = - 55_C
100
0.0125
25_C
80
0.0100
125_C
60
0.0075
40
0.0050
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
20
0.0025
0
0
10
20
30
40
50
4000
3500
I_D - Drain Current (A)
Capacitance
C_iss
3000
2500
2000
1500
1000
C_rss
500
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
0.0000
0
10
20
40
60
80
100
I_D - Drain Current (A)
Gate Charge
8
V_DS = 15 V
I_D = 50 A
6
4
2
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 20 A
1.5
Source-Drain Diode Forward Voltage
100
T_J = 150_C
T_J = 25_C
1.0
10
0.5
0.0
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
Document Number: 71844
S-31268—Rev. B, 16-Jun-03
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
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