SUD50N024-06 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 22-V (D-S) 175C MOSFET

New Product
SUD50N024-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
100
0.010
T_C = - 55_C
80
25_C
0.008
60
125_C
0.006
40
0.004
20
0.002
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 6.3 V
V_GS = 10 V
0
0
3500
10
20
30
40
50
I_D - Drain Current (A)
Capacitance
3000
C_iss
2500
2000
1500
1000
C_rss
500
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 30 A
1.4
0.000
0
10
20
40
60
80
100
I_D - Drain Current (A)
Gate Charge
8
V_DS = 10 V
I_D = 50 A
6
4
2
0
0
8
16
24
32
40
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
1.2
T_J = 150_C
T_J = 25_C
10
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
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