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SUB85N04-03 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175C MOSFET
New Product
SUP/SUB85N04-03
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
250
VGS = 10 thru 6 V
200
200
5V
150
150
Transfer Characteristics
100
50
0
0
200
160
120
80
40
4V
3V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
Transconductance
TC = –55_C
25_C
125_C
100
TC = 125_C
50
25_C
–55_C
0
0
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
0.008
On-Resistance vs. Drain Current
0.006
0.004
0.002
VGS = 4.5 V
VGS = 10 V
0
0
12000
20
40
60
80
100
ID – Drain Current (A)
Capacitance
10000
8000
Ciss
6000
4000
2000
Coss
Crss
0
0
8
16
24
32
40
VDS – Drain-to-Source Voltage (V)
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
0
0
20
40
60
80
100 120
ID – Drain Current (A)
Gate Charge
20
16
VDS = 30 V
ID = 85 A
12
8
4
0
0
60
120
180
240
300
Qg – Total Gate Charge (nC)
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