SST5460 Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel JFETs

2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
–20
5
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1000
100
–16
800
80
g_fs
–12
600
60
I_DSS
2.5
r_DS
g_os
–8
400
40
–4
g_fs @ V_DS = –15 V, V_GS = 0 V
I_DSS @ V_DS = –15 V, V_GS = 0 V
f = 1 kHz
0
0
2
4
6
8
V_GS(off) – Gate-Source Cutoff Voltage (V)
Output Characteristics
–2
V_GS(off) = 1.5 V
V_GS = 0 V
0
10
–1.6
0.2 V
200
0
0
r_DS @ I_D = –100 mA, V_GS = 0 V
g_os @ V_DS = –15 V, V_GS = 0 V
f = 1 kHz
2
4
6
8
V_GS(off) – Gate-Source Cutoff Voltage (V)
Output Characteristics
–10
V_GS(off) = 3 V
–8
20
0
10
–1.2
0.4 V
0.6 V
–0.8
0.8 V
–0.4
1.0 V
0
0
–4
–8
–12
–16
–20
V_DS – Drain-Source Voltage (V)
Output Characteristics
–0.5
V_GS(off) = 1.5 V
0.4 V
–0.4 VGS = 0 V
0.6 V
0.2 V
–0.3
0.8 V
–0.2
–0.1
0
0
1.0 V
1.2 V
–0.2
–0.4
–0.6
–0.8
–1
V_DS – Drain-Source Voltage (V)
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
–6
V_GS = 0 V
0.5 V
–4
1.0 V
–2
1.5 V
2.0 V
0
0
–4
–8
–12
–16
–20
V_DS – Drain-Source Voltage (V)
Output Characteristics
–2
V_GS(off) = 3 V
V_GS = 0 V
–1.6
0.5 V
1.0 V
–1.2
–0.8
–0.4
0
0
1.5 V
2.0 V
2.5 V
–0.2
–0.4
–0.6
–0.8
–1
V_DS – Drain-Source Voltage (V)
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