SS32-M3 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Ideal for automated placement

SS32-M3, SS33-M3, SS34-M3, SS35-M3, SS36-M3
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Vishay General Semiconductor
100
1000
10 T_J = 150 °C
1
Pulse Width = 300 Ë©s
1% Duty Cycle
0.1
0.01
0
T_J = 25 °C
SS32 thru SS34
SS35 and SS36
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
0.1
SS32 thru SS34
SS35 and SS36
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
1000
100
SS32 thru SS34
SS35 and SS36
T_J = 150 °C
10
T_J = 125 °C
1
T_J = 75 °C
0.1
0.01
0.001
0
T_J = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Current Characteristics
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20) MIN.
0.185 (4.69) MAX.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.320 (8.13) REF.
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 04-Aug-15
3
Document Number: 89496
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