SQS484ENW Datasheet, PDF (3/7 Pages) Vishay Siliconix – Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SQS484ENW
Vishay Siliconix
Axis Title
80
10000
V_GS = 10 V thru 4 V
64
1000
48
32
V_GS = 3 V
100
16
0
10
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Axis Title
80
10000
64
1000
48
32
T_C = 125 °C
T_C = 25 °C
16
T_C = -55 °C
0
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
100
10
10
Axis Title
100
10000
T_C = -55 °C
80
T_C = 25 °C
60
1000
T_C = 125 °C
40
100
20
0
10
0
5
10
15
20
25
I_D - Drain Current (A)
2nd line
Transconductance
0.025
Axis Title
10000
0.020
0.015
0.010
0.005
V_GS = 4.5 V
V_GS = 10 V
1000
100
0.000
0
12
24
36
48
I_D - Drain Current (A)
2nd line
10
60
On-Resistance vs. Drain Current
3000
Axis Title
10000
2400
1800
1200
600
0
0
C_iss
C_oss
1000
100
C_rss
8
16
24
32
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
40
10
I_D = 4 A
8
V_DS = 20 V
Axis Title
6
4
2
0
0
5
10
15
20
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
25
S16-2192-Rev. A, 24-Oct-16
3
Document Number: 62896
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000