SQS462EN Datasheet, PDF (3/13 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
20
20
V_GS = 10 V thru 5 V
16
V_GS = 4 V
16
12
12
8
8 ^TC ^{= 25 °C}
SQS462EN
Vishay Siliconix
4
0
0
2.0
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
4
T_C = 125 °C
0
T_C = - 55 °C
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
20
1.6
1.2
0.8
T_C = 25 °C
0.4
T_C = 125 °C
T_C = - 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.25
15
T_C = - 55 °C
T_C = 25 °C
10
T_C = 125 °C
5
0
0
600
2
4
6
8
10
I_D - Drain Current (A)
Transconductance
0.20
0.15
0.10
0.05
0.00
0
V_GS = 4.5 V
V_GS = 10 V
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
500
C_iss
400
300
200
100
C_oss
C_rss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
S12-2200 Rev. C, 24-Sep-12
3
Document Number: 71727
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000