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SQM100P10-19L_15 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Automotive P-Channel 100 V (D-S) 175 °C MOSFET
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
120
VGS = 10 V thru 5 V
120
96
SQM100P10-19L
Vishay Siliconix
90
60
30
0
0
125
100
75
50
25
VGS = 4 V
VGS = 3 V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
TC = 25 °C
TC = -55 °C
TC = 125 °C
72
48
TC = 25 °C
24
TC = 125 °C
TC = -55 °C
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
VGS = 4.5 V
VGS = 10 V
0
0
15000
12000
9000
10
20
30
40
50
ID - Drain Current (A)
Transconductance
Ciss
0.00
0
20
40
60
80
100 120
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 50 A
VDS = 50 V
8
6
6000
4
3000
Coss
Crss
0
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
2
0
0
50
100
150
200
250
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S15-2155-Rev. A, 14-Sep-15
3
Document Number: 75583
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000