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SQJ850EP_15 Datasheet, PDF (3/11 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 5 V
32
32
VGS = 4 V
24
24
SQJ850EP
Vishay Siliconix
16
8
0
0
50
40
30
20
10
0
0
1500
VGS = 3 V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
TC = - 55 °C
25 °C
125 °C
5
10
15
20
25
ID - Drain Current (A)
Transconductance
Ciss
1000
500
Coss
Crss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
16
8
0
0
0.10
125 °C
25 °C
TC = - 55 °C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
0.06
0.04
0.02
0.00
0
VGS = 4.5 V
VGS = 10 V
8
16
24
32
40
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 6 A
8
6
VDS = 30 V
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Qg - Total Gate Charge (nC)
Gate Charge
S11-2419-Rev. F, 19-Dec-11
3
Document Number: 65280
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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