SQJ456EP Datasheet, PDF (3/9 Pages) Vishay Siliconix – Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SQJ456EP
Vishay Siliconix
40
32
24
16
8
0
0
0.04
V_GS = 10 V thru 6 V
5V
4V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.03
0.02
0.01
V_GS = 6 V
V_GS = 10 V
0.00
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 6 A
8
6
V_DS = 15 V
4
2
0
0 5 10 15 20 25 30 35 40 45
Q_g - Total Gate Charge (nC)
Gate Charge
40
32
24
16
T_C = 125 °C
8
25 °C
- 55 °C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3500
3000
C_iss
2500
2000
1500
1000
500
C_rss
C_oss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.5
V_GS = 10 V
I_D = 9.3 A
2.1
1.7
1.3
0.9
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S11-2288-Rev. F, 28-Nov-11
3
Document Number: 65279
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000