SQ2309ES Datasheet, PDF (3/11 Pages) Vishay Siliconix – Automotive P-Channel 60 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SQ2309ES
Vishay Siliconix
8
6
V_GS = 10 V thru 5 V
5
3
V_GS = 4 V
2
V_GS = 3 V
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
5
4
T_C = - 55 °C
3
T_C = 25 °C
2
T_C = 125 °C
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I_D - Drain Current (A)
Transconductance
500
400
300
C_iss
200
100
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
8.0
6.4
4.8
3.2 _{TC = 25 °C}
1.6
T_C = 125 °C
T_C = - 55 °C
0.0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.0
0.8
0.6
V_GS = 4.5 V
0.4
V_GS = 10 V
0.2
0.0
0.0
1.6
3.2
4.8
6.4
8.0
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
8
I_D = 1 A
V_DS = 30 V
6
4
2
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
S11-2111-Rev. B, 07-Nov-11
3
Document Number: 67024
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000