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SM8S10_11 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Surface Mount PAR Transient Voltage Suppressors
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to case
RJC
VALUE
0.90
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
SM8S10AHE3/2D (1)
2.605
2D
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8.0
6.0
4.0
2.0
0
0
50
100
150
200
Case Temperature (°C)
Fig. 1 - Power Derating Curve
150
tr = 10 μs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
td
0
0
10
20
30
40
t - Time (ms)
Fig. 3 - Pulse Waveform
6000
5000
4000
3000
2000
1000
0
25
50
75
100
125
150
175
Case Temperature (°C)
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
10 000
1000
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 4 - Reverse Power Capability
Document Number: 88387 For technical questions within your region, please contact one of the following:
Revision: 20-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
207
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000