SIS424DN Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

SiS424DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
1.2
V_GS = 10 thru 4 V
50
1.0
40
30
20
10
0
0
0.012
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.8
0.6
0.4
0.2
0.0
0.0
1600
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.010
0.008
V_GS = 4.5 V
C_iss
1200
0.006
V_GS = 10 V
0.004
0.002
0.000
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 19.6 A
8
6
V_DS = 10 V
4
V_DS = 16 V
2
800
C_oss
400
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 19.6 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69013
S-82663-Rev. A, 03-Nov-08
www.vishay.com
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