SIS376DN Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
V_GS = 10 V thru 4 V
40
8
SiS376DN
Vishay Siliconix
30
6
T_C = 25 °C
20
4
10
0
0.0
0.009
V_GS = 3 V
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
0.008
0.007
V_GS = 4.5 V
1200
C_iss
900
0.006
0.005
V_GS = 10 V
0.004
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 10 V
6
V_DS = 5 V
4
V_DS = 15 V
2
0
0.0
3.4
6.8
10.2
13.6
17.0
Q - Total Gate Charge (nC)
g
Gate Charge
600
C_oss
300
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 10 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63304
www.vishay.com
S11-1660-Rev. A, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000