SIR882ADP_12 Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
10
V_GS = 10 V thru 4 V
64
8
SiR882ADP
Vishay Siliconix
48
6
T_C = 25 °C
32
4
16
0
0.0
0.011
V_GS = 3 V
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2 _{TC = 125 °C}
0
T_C = - 55 °C
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3100
0.010
0.009
V_GS = 4.5 V
2480
C_iss
1860
0.008
V_GS = 7.5 V
0.007
V_GS = 10 V
0.006
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 50 V
6
V_DS = 25 V
4
V_DS = 75 V
2
1240
C_oss
620
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 20 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
0.8
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63367
www.vishay.com
S11-1662-Rev. A, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000