SIR872DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
50
V_GS = 10 V thru 6 V
80
40
60
V_GS = 5 V
30
SiR872DP
Vishay Siliconix
40
20
0
0
0.022
V_GS = 4 V
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
20
T_C = 25 °C
10 _{TC = 125 °C}
T_C = - 55 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
0.020
0.018
0.016
0.014
V_GS = 7.5 V
V_GS = 10 V
0.012
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 20 A
8
V_DS = 75 V
6
V_DS = 50 V
4
V_DS = 100 V
2400
C_iss
1800
C_oss
1200
600
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.1
I_D = 20 A
1.8
V_GS = 10 V
1.5
V_GS = 7.5 V
1.2
2
0.9
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63809
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S12-0678-Rev. A, 22-Mar-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000