SIR626DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiR626DP
Vishay Siliconix
Axis Title
200
V_GS = 10 V thru 6 V
160
V_GS = 5 V
120
10000
1000
80
40
0
0
100
V_GS = 4 V
V_GS = 3 V
10
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Axis Title
200
10000
160
120
T_C = 25 °C
80
40
0
0
T_C = 125 °C
T_C = -55 °C
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
1000
100
10
10
0.0030
Axis Title
10000
0.0026
0.0022
V_GS = 6 V
1000
0.0018
V_GS = 7.5 V
100
0.0014
V_GS = 10 V
0.0010
0
20
40
60
80
I_D - Drain Current (A)
2nd line
10
100
On-Resistance vs. Drain Current and Gate Voltage
6000
4800
3600
Axis Title
C_iss
10000
1000
2400
C_oss
1200
C_rss
0
0
12
24
36
48
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
100
10
60
Axis Title
10
I_D = 10 A
8
10000
1000
6
V_DS = 15 V, 30 V, 45 V
4
100
2
0
10
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
2.0
I_D = 20 A
1.7
1.4
1.1
0.8
Axis Title
V_GS = 10 V
10000
V_GS = 7.5 V
1000
V_GS = 6 V
100
0.5
-50
10
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-2410-Rev. A, 28-Nov-16
3
Document Number: 75255
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000