SIR474DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
8.0
V_GS = 10 thru 4 V
40
6.4
SiR474DP
Vishay Siliconix
30
V_GS = 3 V
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.015
0.013
4.8
3.2
T_C = 25 °C
T_C = 125 °C
1.6
T_C = - 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1300
C_iss
1040
0.011
V_GS = 4.5 V
780
0.009
0.007
V_GS = 10 V
0.005
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
6
V_DS = 10 V
V_DS = 20 V
4
V_DS = 15 V
2
0
0.0
3.7
7.4
11.1
14.8
18.5
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
520
C_oss
260
C_rss
0
0.0
2.4
4.8
7.2
9.6
12.0
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.6
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3