SIR462DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SiR462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
1.0
V_GS = 10 thru 4 V
60
0.8
50
40
0.6
T_C = - 55 °C
T_C = 25 °C
30
20
10
0
0.0
0.012
V_GS = 3 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.4
0.2
T_C = 125 °C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
0.010
0.008
0.006
V_GS = 4.5 V
V_GS = 10 V
0.004
0.002
0
10 20 30 40 50 60 70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
6
V_DS = 15 V
V_DS = 7.5 V
V_DS = 22.5 V
4
C_iss
1200
900
600
C_oss
300
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 20 A
1.5
1.3
V_GS = 10 V
V_GS = 4.5 V
1.1
2
0.9
0
0
5
10
15
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68823
S-82771-Rev. C, 17-Nov-08
www.vishay.com
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