SIR440DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
10
V_GS = 10 thru 4 V
64
8
SiR440DP
Vishay Siliconix
48
32
V_GS = 3 V
16
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0020
0.0018
0.0016
V_GS = 4.5 V
6
T_C = 25 °C
4
T_C = 125 °C
2
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
7500
C_iss
6000
4500
0.0014
0.0012
V_GS = 10 V
0.0010
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 5 V
6
V_DS = 10 V
4
V_DS = 15 V
2
3000
C_oss
1500
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 20 A
1.5
V_GS = 10 V
1.3
1.1
V_GS = 4.5 V
0.9
0
0
21
42
63
84
105
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68761
S-81711-Rev. A, 04-Aug-08
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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