SIR406DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
V_GS = 10 V thru 4 V
56
8
V_GS = 3 V
42
6
SiR406DP
Vishay Siliconix
28
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0050
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2800
0.0045
0.0040
V_GS = 4.5 V
2240
C_iss
1680
0.0035
0.0030
V_GS = 10 V
0.0025
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 5 V
6
V_DS = 10 V
4
V_DS = 16 V
1120
C_oss
560
C_rss
0
0
5
10
15
20
25
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 15 A
1.7
1.4
V_GS = 10 V
V_GS = 4.5 V
1.1
2
0.8
0
0
7
14
21
28
35
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 64982
S09-1095-Rev. A, 15-Jun-09
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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