SIJ420DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
V_GS = 10 V thru 4 V
56
8
SiJ420DP
Vishay Siliconix
42
6
T_C = 25 °C
28
4
14
0
0
0.0035
0.0031
0.0027
3V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS = 4.5 V
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
4500
3600
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
2700
0.0023
0.0019
V_GS = 10 V
0.0015
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 5 V
6
V_DS = 10 V
4
V_DS = 15 V
2
1800
C_oss
900
0
0
C_rss
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 15 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0
0
13
26
39
52
65
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 65707
S10-0463-Rev. A, 22-Feb-10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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