SIHU7N60E Datasheet, PDF (3/8 Pages) Vishay Siliconix – E Series Power MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHU7N60E
Vishay Siliconix
20 _{TOP 15 V}
14 V
13 V
12 V
11 V
16
10 V
9V
8V
7V
6V
12 ^{BOTTOM 5 V}
T_J = 25 °C
8
4
0
0
5
10
15
20
25
30
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
I_D = 3.5 A
2.5
2
1.5
V_GS = 10 V
1
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
12
TOP 15 V
14 V
13 V
12 V
11 V
9
10 V
9V
8V
7V
6V
BOTTOM 5 V
6
T_J = 150 °C
3
0
0
5
10
15
20
25
30
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
10 000
1000
100
10
C_oss
C_rss
C_iss
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
1
0 100 200 300 400 500 600
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
T_J = 25 °C
16
12
8
T_J = 150 °C
4
24
V_DS = 480 V
20
V_DS = 300 V
V_DS = 120 V
16
12
8
4
0
0
5
10
15
20
25
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
0
0
10
20
30
40
Q_g, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-3086-Rev. B, 24-Dec-12
3
Document Number: 91511
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