SIHF10N40D Datasheet, PDF (3/8 Pages) Vishay Siliconix – D Series Power MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHF10N40D
Vishay Siliconix
25
TOP 15 V
14 V
13 V
T_J = 25 °C
12 V
20
1111 VV
10 V
9V
8V
7V
15
6V
BOTTOM 5 V
10
5
0
0
5
10
15
20
25
30
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
2.5
I_D = 5 A
2
1.5
1
V_GS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
16
TOP 15 V
14 V
13 V
12 V
11 V
12
10 V
9V
8V
7V
BOTTOM 6 V
8
T_J = 150 °C
4
5V
0
0
5
10
15
20
25
30
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
10 000
1000 ^Ciss
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
100
C_oss
10
C_rss
1
0 50 100 150 200 250 300 350 400
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25
20
15
10
T_J = 150 °C
5
T_J = 25 °C
0
0
5
10
15
20
25
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
24
V_DS = 400 V
20
V_DS = 250 V
V_DS = 100 V
16
12
8
4
0
0
5
10
15
20
25
Q_g, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-1602-Rev. C, 15-Aug-16
3
Document Number: 91500
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