SIHB35N60E Datasheet, PDF (3/7 Pages) Vishay Siliconix – E Series Power MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHB35N60E
Vishay Siliconix
100
80
60
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
T_J = 25 °C
40
20
0
0
5
10
15
20
25
30
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
60
TOP 15 V
14 V
13 V
50
12 V
11 V
10 V
9V
40
8V
7V
6V
BOTTOM 5 V
30
T_J = 150 °C
20
10
0
0
5
10
15
20
25
30
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
I_D = 17 A
2.5
2.0
1.5
V_GS = 10 V
1.0
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
100 000
10 000
1000
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
100
C_oss
10
C_rss
1
0.1
0
100 200 300 400 500 600
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
T_J = 25 °C
80
60
T_J = 150 °C
40
20
V_DS = 27.4 V
0
0
5
10
15
20
25
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
5000
500
50
0
C_oss
E_oss
100 200 300 400 500
V_DS
Fig. 6 - C_oss and E_oss vs. V_DS
18
16
14
12
10
8
6
4
2
0
600
S16-1157-Rev. A, 13-Jun-16
3
Document Number: 91581
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