SIHB22N65E Datasheet, PDF (3/9 Pages) Vishay Siliconix – E Series Power MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHB22N65E
Vishay Siliconix
60
TOP 15 V
14 V
T_J = 25 °C
13 V
50
12 V
11 V
10 V
40
9V
8V
7V
30
20
10
0
0
6V
5V
5
10 15 20 25 30
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
I_D = 11 A
2.5
2
1.5
1
V_GS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
40
TOP 15 V
14 V
T_J = 150 °C
13 V
30
12 V
11 V
10 V
9V
7V
20
8V
10
6V
5V
0
0
5
10 15 20 25 30
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
10 000
1000
100
10
C_iss
Ä¡
C_oss
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
Ä¡
C_{Ä¡ rss}
1
0
100 200 300 400 500 600
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
60
50
40
30
T_J = 150 °C
20
10
0
0
T_J = 25 °C
V_DS = 30 V
5
10
15
20
25
V_GS, Gate-to-Source Voltage (V)
5000
500
50
0
16
14
12
C_oss
10
E_oss
8
6
4
2
0
100 200 300 400 500 600
V_DS
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - C_oss and E_oss vs. V_DS
S15-0291-Rev. B, 23-Feb-15
3
Document Number: 91538
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